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Product Detailed Parameters
- Description：MOSFET PWRQFN 5X6 40V 0.0021OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4766 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI100N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It supports a drain-source voltage of 40 V and delivers a continuous drain current of 100 A at 25°C. The device features a low on-state resistance of less than 2.1 mΩ and a maximum power dissipation of 83 W. It operates within a junction temperature range of -55°C to +150°C and includes avalanche rating capabilities with single pulse energy up to 264 mJ.
Feature Summary
- Low profile, space-saving package design
- Avalanche rated for robust operation
- Fast switching times with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals standards
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix designation when ordering. The -AQ suffix indicates that the component is fully AEC-Q101 qualified, meeting automotive reliability standards. Confirm the exact part number matches your required qualification level before finalizing procurement documentation.
Selection Notes
Select this component for applications requiring high current handling in a small footprint. The low thermal resistance facilitates efficient heat dissipation. Ensure the operating environment stays within the specified -55°C to +150°C junction temperature limits for optimal performance and longevity.
Part Context
This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs. These devices utilize advanced trench technology to achieve low on-state resistance and fast switching speeds. The series is designed for commercial and industrial applications, offering a balance of electrical performance and physical compactness.
Replacement Considerations
Check datasheets for alternative parts with matching 40V ratings and similar current capacities. Verify package compatibility and thermal characteristics to ensure seamless integration into existing designs without circuit modification.
