DI110N15PQ-AQ

DI110N15PQ-AQ

$1.39
  • Description:MOSFET POWERQFN 5X6 N 150V
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:d91b2f7554b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET POWERQFN 5X6 N 150V
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:11.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):62.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-QFN (5x6)
  • Package / Case:8-PowerTDFN

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DI110N15PQ-AQ

Overview

The DI110N15PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 150 V and a continuous drain current (ID) of 55 A at TC = 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 15 mΩ at VGS = 4.5 V and ID = 20 A. Key dynamic parameters include a total gate charge (Qg) of 69 nC and turn-on delay time of 25 ns. It supports a single pulse avalanche energy (EAS) of 158 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Logic-level gate drive capability for efficient control
  • Avalanche rated with 100% avalanche testing
  • Low profile, space-saving QFN5x6 package design
  • Fast switching times with low gate charge

Applications

  • DC/DC Converters
  • Power Supplies
  • Synchronous Rectifiers
  • DC Drives
  • Power Tools

Procurement Notes

Verify the specific suffix against official documentation to confirm qualification status. The -AQ suffix indicates the component is undergoing AEC-Q101 qualification, while -Q denotes compliance. Ensure the ordered part number matches the required automotive grade specifications for your target application environment.

Selection Notes

Select this component for high-current applications requiring robust avalanche performance and low thermal resistance. The logic-level gate drive simplifies driver circuit design. Consider the 15 mΩ RDS(on) limit when calculating conduction losses at higher case temperatures or lower gate voltages.

Part Context

This device belongs to Diotec's DIxxNxx-PQ series of N-Channel Power MOSFETs. These components are designed for commercial and industrial use, offering a balance of high current handling and low on-resistance in a small footprint. The series includes variants with different voltage ratings and current capabilities.

Replacement Considerations

DI110N15PQ

FAQ

What is the difference between the -Q and -AQ suffixes?

The -Q suffix indicates the part is AEC-Q101 compliant, whereas the -AQ suffix signifies that the part is currently in the AEC-Q101 qualification process.

Is the DI110N15PQ-AQ avalanche rated?

Yes, the device is avalanche rated and has undergone 100% avalanche testing as specified in the datasheet.

DI110N15PQ-AQDI110N15PQ-AQ
$1.39
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