SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DI110N15PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 150 V and a continuous drain current (ID) of 55 A at TC = 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 15 mΩ at VGS = 4.5 V and ID = 20 A. Key dynamic parameters include a total gate charge (Qg) of 69 nC and turn-on delay time of 25 ns. It supports a single pulse avalanche energy (EAS) of 158 mJ and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation to confirm qualification status. The -AQ suffix indicates the component is undergoing AEC-Q101 qualification, while -Q denotes compliance. Ensure the ordered part number matches the required automotive grade specifications for your target application environment.
Select this component for high-current applications requiring robust avalanche performance and low thermal resistance. The logic-level gate drive simplifies driver circuit design. Consider the 15 mΩ RDS(on) limit when calculating conduction losses at higher case temperatures or lower gate voltages.
This device belongs to Diotec's DIxxNxx-PQ series of N-Channel Power MOSFETs. These components are designed for commercial and industrial use, offering a balance of high current handling and low on-resistance in a small footprint. The series includes variants with different voltage ratings and current capabilities.
DI110N15PQ
The -Q suffix indicates the part is AEC-Q101 compliant, whereas the -AQ suffix signifies that the part is currently in the AEC-Q101 qualification process.
Yes, the device is avalanche rated and has undergone 100% avalanche testing as specified in the datasheet.