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Product Detailed Parameters
- Description：MOSFET POWERQFN 5X6 N 30V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：135W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI170N03PQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN5x6 (TDSON-8 / DFN5060) package. It features a drain-source voltage of 30 V and a continuous drain current of 170 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 1.5 mΩ at VGS = 4.5 V and ID = 20 A. Key electrical parameters include a gate-source threshold voltage ranging from 1.2 V to 2.0 V, a total gate charge of 90 nC, and a power dissipation capacity of 135 W. It supports a peak drain current of 680 A and offers avalanche energy ratings of 1350 mJ.
Feature Summary
- Logic level gate drive capability for efficient control
- Low on-state resistance for minimized conduction losses
- Fast switching times with low gate charge
- Avalanche rated for robust transient handling
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes parts currently undergoing automotive qualification. Confirm RoHS exemption status regarding lead content if required for your assembly process.
Selection Notes
Select this component for high-current applications requiring low profile packaging. Ensure thermal management aligns with the 0.93 K/W junction-to-case thermal resistance. Verify that the logic-level gate drive matches your controller's output voltage, particularly at the 4.5 V threshold condition for optimal RDS(on).
Part Context
This part belongs to Diotec's standard discrete semiconductor portfolio, designed for modern electronic circuits. It utilizes silicon technology within a space-saving surface-mount package. The product line emphasizes high availability and fast worldwide delivery for industrial and consumer electronics manufacturing.
Replacement Considerations
Consult official Diotec documentation for confirmed substitute part numbers. Cross-referencing requires matching package dimensions, pinout configurations, and critical electrical limits such as VDSS, ID, and RDS(on).
