DI5A7N65D1K

$0.67

Description：MOSFET DPAK N 650V 5.7A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:2f42a9137433 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET DPAK N 650V 5.7A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：430mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：722 pF @ 325 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

DI5A7N65D1K

Overview

The DI5A7N65D1K is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a Drain-Source voltage of 650 V and a continuous drain current of 5.7 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 430 mΩ at VGS = 10 V. Key electrical parameters include a gate-source threshold voltage ranging from 2 V to 4 V, a power dissipation capacity of 36 W, and a single pulse avalanche energy rating of 45 mJ. The component supports a junction temperature up to 150°C.

Feature Summary

High Drain-Source voltage capability for robust performance
ESD-protected Gate structure
Low on-state resistance for efficiency
Fast switching times with avalanche rated characteristics

Applications

Power Supplies
Power Factor Correction (PFC)
High Voltage DC Drives
Battery Management Systems (BMS)

Procurement Notes

Verify the specific suffix requirements against your design needs. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details if applicable. Ensure thermal management aligns with the specified RthJC and RthJA values for reliable operation under load conditions.

Selection Notes

Select this component for high-voltage applications requiring moderate current handling. Evaluate the 430 mΩ maximum RDS(on) against your conduction loss requirements. Consider the 45 mJ avalanche energy rating for circuits prone to inductive kickback. Verify that the TO-252AA package fits your PCB layout constraints and thermal dissipation strategy effectively.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for general-purpose power switching. It utilizes a planar trench technology to achieve low on-resistance and fast switching speeds. The device is intended for use in standard commercial and industrial electronic equipment where reliability and efficiency are critical factors.

Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute matches the 650 V VDSS and 5.7 A ID specifications. Ensure the replacement maintains similar switching characteristics and thermal resistance values to avoid redesigning the cooling system.