DIT074P05

$0.48

Description：DIT074P05
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:2de2adf5363e Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIT074P05
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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DIT074P05

Overview

The DIT074P05 is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-current switching applications. It features an advanced trench technology with a drain-source voltage (VDSS) of -55 V and a continuous drain current (-ID) of -74 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 25 mΩ at VGS = -10 V and ID = -30 A. It supports a maximum power dissipation (PD) of 200 W and operates within a junction temperature range of -55°C to +175°C. The component is housed in a TO-220AB package and is rated for single-pulse avalanche energy of 936 mJ.

Feature Summary

Advanced Trench Technology for optimized performance
Low on-state resistance and gate charge for efficiency
Fast switching times suitable for high-frequency operation
Avalanche rated capability for robust protection

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm these designations match your project's reliability requirements before finalizing orders.

Selection Notes

Select this component for designs requiring high current handling up to 74 A and low conduction losses below 25 mΩ. Ensure thermal management accommodates the 200 W dissipation rating at 25°C case temperature. Verify that the gate drive voltage aligns with the standard level-gate drive specification for optimal RDS(on) performance.

Part Context

This part belongs to Diotec Semiconductor's discrete semiconductor portfolio, specifically within the P-Channel Power MOSFET category. It utilizes TO-220AB packaging and is marked with code LJF4905. The product complies with RoHS directives (excluding exemption 7a-I), REACH regulations, and conflict mineral standards.