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The Panasonic DMA261050R is a dual silicon PNP epitaxial planar digital transistor designed for compact circuit integration. It features a Mini5-G3-B surface-mount package with dimensions of 2.9mm x 2.8mm x 1.1mm. The device provides a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Total power dissipation is rated at 300 mW, with a junction temperature limit of +150 °C. Each internal transistor includes an integrated base input resistor (R1) with a typical value of 10 kΩ.
Verify the specific ordering suffix against official documentation to confirm exact packaging quantities and reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the selected variant matches the required pinout and marking codes for your assembly process.
Select this component when a dual PNP digital switch is required in a Mini5-G3-B footprint. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements. Check that the 10 kΩ internal resistance aligns with the driving source capabilities. Consider thermal derating if ambient temperatures exceed standard operating ranges.
This component belongs to the Panasonic DRA series of composite transistors. It serves as a direct replacement for the DRA2114T basic part number. The device is manufactured using silicon epitaxial planar technology optimized for high-density surface mount applications.
The DRA2114T is the documented basic part number equivalent. Verify pin compatibility and electrical characteristics before substitution. No other specific substitute part numbers are confirmed in the provided datasheet.
The typical value for the input resistance (R1) is 10 kΩ.
The total power dissipation (PT) is rated at 300 mW at an ambient temperature of 25°C.
The package has five pins: two bases, one common emitter, and two collectors.