DMB53D0UV-13

Overview

The DMB53D0UV-13 is an N-channel enhancement mode MOSFET combined with an NPN transistor in a single SOT563 package. It features a drain-source voltage of 50V and continuous drain current of 160mA. The device has a maximum gate threshold voltage of 1.0V, static on-resistance up to 5Ω, and total power dissipation of 250mW. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Integrates an N-channel MOSFET and an NPN transistor within one ultra-small surface mount package
• Features very low gate threshold voltage for efficient logic-level driving
• Provides ESD protection on the MOSFET gate up to 2kV
• Compliant with RoHS standards and free of lead, halogen, and antimony

Applications

• Automotive applications requiring high reliability components
• General purpose switching circuits utilizing dual transistor functionality
• Low voltage signal processing and control systems

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all necessary automotive or industrial qualification standards if applicable. Ensure compatibility with the target PCB footprint and soldering profile during integration.

Selection Notes

Select this component when space constraints require combining MOSFET and BJT functions in a single footprint. Consider the low gate threshold voltage for low-power logic interfaces. Evaluate the thermal resistance and power dissipation limits against the expected operating load conditions.

Part Context

This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically designed for compact electronic designs. It utilizes the SOT563 case outline to minimize board space while providing dual active devices. The product is manufactured in facilities adhering to quality management standards.

Replacement Considerations

For automotive grade requirements with specific change control, refer to the related Q-suffix parts qualified to AEC-Q101. Verify pinout and electrical characteristics before substituting with other dual-transistor packages.

FAQ

What is the maximum ESD protection rating for the MOSFET gate?

The MOSFET gate is protected against electrostatic discharge up to 2kV.

Does this component meet automotive reliability standards?

The standard version is qualified to JEDEC standards for high reliability. Automotive-specific versions are available with AEC-Q101 qualification.

What is the maximum collector-emitter breakdown voltage for the integrated NPN transistor?

The maximum collector-emitter breakdown voltage (VCEO) is 45V.