DMC1030UFDBQ-13

$0.15

Description：MOSFET N/P-CH 12V 5.1A 6UDFN
Series：-

SKU:85ae16ee3fd7 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V 5.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：5.1A
Rds On (Max) @ Id, Vgs：34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1003pF @ 6V
Power - Max：1.36W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：Automotive
Qualification：AEC-Q101

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DMC1030UFDBQ-13

Overview

The DMC1030UFDBQ-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101. It integrates an N-channel and P-channel device in a U-DFN2020-6 package with a maximum height of 0.6mm. The N-channel transistor supports a drain-source voltage (BVDSS) of 12V and offers a maximum on-resistance (RDS(ON)) of 34mΩ at VGS=4.5V, with a continuous drain current (ID) of 5.1A at +25°C. The P-channel counterpart provides -12V BVDSS, a maximum RDS(ON) of 59mΩ at VGS=-4.5V, and a continuous drain current of -3.9A at +25°C. Both channels feature ESD protected gates.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low profile construction with a maximum height of 0.6mm
Integrated gate protection diodes for enhanced ESD robustness
Totally lead-free and fully RoHS compliant with halogen and antimony free materials

Applications

Load switches
Power management functions
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 10,000 units. Confirm that the component meets the necessary IATF 16949 manufacturing facility requirements if strict automotive change control protocols are mandated for the target application.

Selection Notes

Select this component when a compact complementary MOSFET pair is required for low-voltage switching applications. Ensure the design accommodates the specified thermal resistance values and that the gate drive voltages align with the threshold characteristics for optimal on-resistance performance across the operating temperature range.

Part Context

This part belongs to the DMC1030UFDBQ series of complementary enhancement mode MOSFETs manufactured by Diodes Incorporated. It is housed in the U-DFN2020-6 (Type B) package. The datasheet explicitly marks this device as not recommended for new designs and recommends using the DMC2025UFDBQ as an alternative.