ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.6A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：395pF @ 15V, 324pF @ 15V
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
Download product information
Overview
The DMC3060LVT-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single TSOT26 package. The N-channel transistor supports a drain-source voltage of 30V with a maximum continuous drain current of 3.6A at 25°C, while the P-channel counterpart handles -30V and -2.8A. Both channels exhibit low on-resistance, rated at 60mΩ for the N-channel and 95mΩ for the P-channel at VGS = 10V. The component operates across a temperature range of -55°C to +150°C and features fast switching characteristics suitable for power management applications.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact surface-mount package
- Optimized for high efficiency through minimized on-state resistance
- Designed to maintain superior switching performance alongside low input capacitance
- Fully compliant with RoHS standards and free from halogen and antimony
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the datasheet. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2, RoHS 3, and the manufacturer's definition of Halogen- and Antimony-free 'Green' products before finalizing procurement orders.
Selection Notes
Select this component when a dual-channel solution is required for space-constrained designs utilizing the TSOT26 footprint. Ensure the gate drive voltage aligns with the specified thresholds, as the on-resistance varies significantly between VGS levels of 4.5V and 10V. Evaluate thermal dissipation requirements against the junction-to-ambient resistance values provided for different PCB mounting conditions.
Part Context
This part belongs to the DMC3060LVT series of complementary MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It serves as a specialized discrete semiconductor solution designed to replace separate N-channel and P-channel devices, thereby reducing board space and simplifying assembly processes in modern electronic equipment.
Replacement Considerations
The datasheet lists the DMC3060LVT-7 as an alternative packaging option within the same product family. Verify pinout compatibility and electrical parameter equivalence before substituting.
