DME20B010R

DME20B010R

$0.08
  • Description:TRANS NPN/PNP DARL 50V MINI5-G3
  • Series:-

SKU:1cbfd4e3e4b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP DARL 50V MINI5-G3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP Complementary Darlington
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 2mA, 10V
  • Power - Max:300mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:Mini5-G3-B
  • Grade:-
  • Qualification:-

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DME20B010R

Overview

The DME20B010R is a composite bipolar junction transistor (BJT) array manufactured by Panasonic Electronic Components. It integrates complementary NPN and PNP Darlington transistors within a single SMini-5 surface-mount package. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. Key electrical parameters include a transition frequency of 150 MHz, a maximum power dissipation of 300 mW, and a collector-base voltage of 60 V. The emitter-base voltage rating is 7 V, with saturation voltages specified at 130 mV and 200 mV. The component supports an operating junction temperature up to 150°C and is available in reel, cut tape, and MouseReel packaging formats.

Feature Summary

  • Integrates complementary NPN and PNP Darlington configurations for efficient circuit design
  • Utilizes compact SMini-5 surface-mount packaging for space-constrained applications
  • Provides high-speed switching capabilities with a 150 MHz transition frequency

Applications

  • High-frequency signal processing circuits
  • Power management modules requiring complementary switching
  • Compact consumer electronics assemblies

Procurement Notes

Verify the specific ordering suffix and package variant against the official Panasonic datasheet to ensure compatibility with automated assembly processes. Confirm that the selected revision matches the required thermal characteristics and pinout configuration. Cross-reference the part number with the manufacturer's latest discontinuation notices to assess long-term availability and lifecycle status before finalizing procurement plans.

Selection Notes

Select this component when a dual complementary transistor solution is required in a minimal footprint. The Darlington configuration offers high current gain suitable for driving loads directly. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that thermal management accommodates the 300 mW power dissipation limit within the specified temperature range.

Part Context

This part belongs to Panasonic’s series of composite bipolar transistors designed for integrated switching functions. The DME20B010R specifically addresses the need for matched NPN/PNP pairs in compact form factors. It serves as a specialized alternative to discrete transistor arrangements, simplifying board layout while maintaining performance consistency between complementary devices.

Replacement Considerations

Consult the official Panasonic datasheet for confirmed substitute part numbers or direct replacements. Verify pin compatibility and electrical specifications before considering any alternative components from other manufacturers.

DME20B010RDME20B010R
$0.08
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