DME2206-000

RF Diode Overview

The DME2206-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME, DMF, and DMJ series. Designed for X-band applications (8.2 to 12.4 GHz), it features a common cathode configuration with outline drawing 504-013. Key electrical specifications include a junction capacitance of 0.15 to 0.30 pF at 0 V, a series resistance of 8 Ω at 5 mA, and a turn-on voltage of 3 V at 10 μA. The forward voltage ranges from 325 to 425 mV at 1 mA, classifying it as a medium drive device. It operates within a temperature range of -65 °C to +175 °C.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Statistical process control wafer fabrication ensures uniformity
• Low parasitics suitable for balanced mixer configurations

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• X-Band Mixers
• Detectors

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings against datasheet specifications. Confirm RoHS compliance status and package outline number 504-013. Ensure handling procedures account for electrostatic discharge sensitivity inherent to beam-lead devices.

RF Diode Selection Notes

Select this part for X-band designs requiring medium local oscillator drive levels. Compare junction capacitance and series resistance against circuit impedance requirements. Consider alternative drive levels (low or high) if operating conditions differ significantly from the specified parameters.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers frequency bands from S through Ka, offering single, pair, common cathode, anti-parallel, ring quad, and bridge quad configurations to suit various microwave integrated circuit topologies.

RF Diode Replacement Considerations

Compatible substitutes within the same series include DME2957-000 for single configurations and DME2829-000 for series pairs in the X-band. Verify that replacement parts match the required outline drawing and electrical characteristics.

RF Diode FAQ

What is the maximum continuous wave power dissipation per junction?

The absolute maximum rating for continuous wave power dissipation is 75 mW per junction.

Is the DME2206-000 suitable for use as a high-speed switch?

Yes, beam-lead Schottky barrier diodes in this series can be used as modulators and high-speed switches in addition to their primary mixer applications.

How does the beam-lead design benefit microwave applications?

The beam-lead design eliminates bonding difficulties to very small junction areas characteristic of low capacitance microwave devices, ensuring reliable connections and consistent performance.