DME2459-000

RF Diode Overview

The DME2459-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME series, configured as a ring quad. It operates in the K and Ka frequency bands (18.0 to 40.0 GHz). The device features a maximum junction capacitance of 0.1 pF at 0 V and a typical series resistance of 18 Ω at 5 mA. It provides a medium drive level with a forward voltage ranging from 375 mV to 550 mV at 1 mA. The component utilizes a beam-lead design for low parasitics and impedance control, housed in the 488-002 outline package.

RF Diode Feature Summary

• Beam-lead architecture designed for applications through 40 GHz
• Low intermodulation distortion and low 1/f noise characteristics
• Statistical Process Control wafer fabrication ensures uniformity

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Balanced mixers
• Detectors
• Modulators
• High-speed switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation before procurement. Confirm that the 488-002 outline drawing matches the required footprint for your microwave integrated circuit layout. Ensure proper electrostatic discharge precautions are implemented during handling due to the sensitivity of the beam-lead structure.

RF Diode Selection Notes

Select this part when a medium drive level is required for K or Ka band balanced mixer designs. Compare the 0.1 pF maximum capacitance and 18 Ω series resistance against system impedance requirements. Verify that the 375 mV to 550 mV forward voltage range aligns with the available local oscillator drive power in the target application.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka bands. The DME designation specifically indicates a medium drive level configuration, distinguishing it from the low drive (DMF) and high drive (DMJ) variants within the same frequency band family.

RF Diode Replacement Considerations

DME2458-000 (low drive), DMJ2455-000 (high drive). Other configurations include DMF2454-000 (common cathode) and DME2851-000 (bridge quad).

RF Diode FAQ

What is the maximum operating temperature for the DME2459-000?

The absolute maximum operating temperature is +175 °C.

How does the beam-lead design benefit this component?

The beam-lead design reduces bonding difficulties associated with small junction areas and results in low parasitics and close impedance control.

Is this device suitable for use as a detector?

Yes, the datasheet explicitly lists detectors as one of the primary applications alongside mixers and modulators.