DME3939-000

RF Diode Overview

The DME3939-000 is a silicon beamless Schottky diode configured as an octoquad ring. It features a medium barrier height suitable for S through X band applications. Electrical specifications per junction include a forward voltage of 600 to 800 mV at 1.0 mA, a maximum capacitance of 15 pF at 0 V and 1 MHz, and a series resistance of 0.15 to 0.30 Ω at 5 mA. The device operates within a temperature range of -65°C to +150°C and supports a peak inverse voltage up to the breakdown limit.

RF Diode Feature Summary

• Mechanically rugged design optimized for high reliability in commercial and industrial environments
• Medium barrier height configuration tailored for balanced mixer performance across wide frequency ranges
• Octoquad ring structure enabling versatile integration into double-balanced mixer topologies

RF Diode Applications

• Microwave monolithic integrated circuit (MIC) assembly
• Automated high-volume manufacturing lines
• Double-balanced mixer circuits

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the datasheet revision number and manufacturer markings against official Skyworks documentation. Ensure handling procedures strictly follow industry-standard electrostatic discharge precautions to prevent damage during assembly and testing.

RF Diode Selection Notes

Select this part when a medium barrier height is required for S through X band operations. Confirm that the octoquad ring topology aligns with the specific mixer architecture requirements. Verify that the electrical parameters meet the system's impedance and capacitance constraints.

RF Diode Part Context

This component belongs to the Skyworks beamless diode family, which includes pairs, quads, and rings. It shares the same die technology and packaging standards as other devices in the series, differing primarily in internal connectivity and barrier height specifications.

RF Diode Replacement Considerations

Direct substitutes within the same family include DMF3938-000 for low barrier or DMJ3940-000 for high barrier configurations. These alternatives maintain identical physical dimensions and bonding requirements while offering different electrical characteristics.