DME50C010R

Description：TRANS NPN/PNP DARL 50V SMINI5-F3
Series：-

SKU:09a8c7240c98 Category: Bipolar Transistor Arrays Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：TRANS NPN/PNP DARL 50V SMINI5-F3
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Transistor Type：1 NPN, 1 PNP Complementary Darlington
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Vce Saturation (Max) @ Ib, Ic：300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：210 @ 2mA, 10V
Power - Max：150mW
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD (5 Leads), Flat Leads
Supplier Device Package：SMini5-F3-B
Grade：-
Qualification：-

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DME50C010R

Overview

The DME50C010R is a composite transistor in the SMini5 package containing one PNP (Tr1) and one NPN (Tr2) epitaxial planar silicon transistor. It features a high forward current transfer ratio with excellent linearity and low collector-emitter saturation voltage. The device supports a maximum collector current of 100 mA per transistor, a transition frequency of 150 MHz, and a total power dissipation of 150 mW. It operates within an ambient temperature range of -40°C to +85°C and is compliant with RoHS standards.

Feature Summary

High forward current transfer ratio with excellent linearity
Low collector-emitter saturation voltage for efficient switching
Halogen-free and RoHS compliant construction

Applications

General amplification circuits
Office equipment signal processing
Household appliance control logic

Procurement Notes

Verify component authenticity through authorized Panasonic Industry distributors or certified suppliers. Confirm the marking symbol A4 on the package matches the datasheet specifications. Ensure storage conditions adhere to the specified shelf life requirements to maintain solderability and electrical performance prior to assembly.

Selection Notes

Select this component for designs requiring dual complementary transistors in a compact surface-mount footprint. Evaluate the 150 mW total power dissipation limit against thermal constraints at elevated ambient temperatures up to 85°C. Consider the 150 MHz transition frequency suitability for the intended signal bandwidth and switching speed requirements.

Part Context

This part belongs to the DME50C01 series manufactured by Panasonic Industry. It utilizes the SMini5-F3-B package configuration, which is compatible with JEITA SC-113CB standards. The series is designed for general-purpose amplification applications where space efficiency and reliable switching characteristics are prioritized.