DMF2826-000

RF Diode Overview

The DMF2826-000 is a beam-lead silicon Schottky barrier mixer diode configured as a series pair. Designed for X-band applications, it operates within the 8.2 to 12.4 GHz frequency range. The device features a maximum junction capacitance of 0.30 pF at 0 V and 1 MHz, with a minimum value of 0.15 pF. It exhibits a typical series resistance of 8 Ω measured at 5 mA. Electrical characteristics include a breakdown voltage of 2 V at 10 μA and a forward voltage ranging from 220 mV to 300 mV at 1 mA. This low-drive configuration utilizes an N-type substrate and is housed in the 504-012 outline package.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with small junction areas characteristic of low capacitance devices.
• Statistical process control wafer fabrication ensures narrow spread of capacitance values for close impedance control.
• Low parasitics and uniformity make the device well-suited for balanced mixer configurations.

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• X-Band Mixers
• Detectors

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Skyworks Solutions documentation. Confirm that the received hardware matches the specified 504-012 outline drawing and electrical parameters. Ensure proper electrostatic discharge precautions are implemented during handling, as these beam-lead devices are sensitive to static potentials.

RF Diode Selection Notes

Select this specific part when designing for X-band frequencies requiring a low-drive local oscillator configuration. The series pair topology is appropriate for balanced mixer circuits where common cathode or anti-parallel arrangements are not required. Verify that the 8 Ω series resistance and sub-0.30 pF capacitance align with the system's impedance matching network requirements.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The 'DMF' prefix identifies it as a low-drive variant intended for starved local oscillator drive levels. The series encompasses singles, pairs, common cathodes, anti-parallel pairs, and quads across S, C, X, Ku, K, and Ka bands.

RF Diode Replacement Considerations

Within the same series, the DME2829-000 serves as the medium-drive equivalent, while the DMJ2093-000 provides the high-drive alternative. All three share the identical 504-012 outline drawing and X-band frequency designation, differing primarily in forward voltage and drive level specifications.

RF Diode FAQ

What is the maximum operating temperature for the DMF2826-000?

The absolute maximum operating temperature (TA) for this device is +175 °C.

How does the beam-lead construction benefit microwave integrated circuit designs?

The beam-lead design eliminates bonding difficulties to very small junction areas, which is critical for maintaining low capacitance and minimizing parasitics in high-frequency applications up to 40 GHz.

Is this device suitable for use as a high-speed switch?

Yes, the datasheet indicates that these beam-lead Schottky barrier diodes can be utilized as modulators and high-speed switches in addition to their primary mixer applications.