DMG1013UWQ-7

$0.21

Description：MOSFET P-CH 20V 820MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:850eafcf8243 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG1013UWQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 20V 820MA SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG1013UWQ-7

Description：MOSFET P-CH 20V 820MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：820mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.62 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：59.76 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：310mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMG1013UWQ-7

DMG1013UWQ-7

Single FETs, MOSFETs Overview

The DMG1013UWQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -0.82 A at +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) ranging from 0.5 Ω to 1.5 Ω depending on gate drive conditions. Key electrical parameters include a gate threshold voltage (VGS(TH)) between -0.5 V and -1.0 V, total gate charge (Qg) of 622.4 pC, and input capacitance (Ciss) of 59.76 pF. It operates within a temperature range of -55°C to +150°C and is housed in an SOT323 package.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability
ESD protected structure
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Single FETs, MOSFETs Applications

Automotive power switching circuits requiring specific change control
Low voltage load switch applications
General purpose power management

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision number matches the design requirements. Confirm that the SOT323 packaging format aligns with the assembly line capabilities. Ensure the ordering suffix corresponds to the required reel quantity. Validate compliance with RoHS and automotive qualification standards before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the thermal resistance characteristics and maximum power dissipation limits during circuit layout. Evaluate the gate threshold voltage compatibility with the driving logic levels to ensure reliable switching performance under varying temperature conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMG1013 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series includes variants such as DMG1013T-7 and DMG1013UW-7, which share similar electrical characteristics but differ in packaging configurations like SOT-523 or standard SOT-323. The DMG1013UWQ-7 specifically denotes the automotive-grade version packaged in SOT323.

Single FETs, MOSFETs Replacement Considerations

DMG1013UW-7

Single FETs, MOSFETs FAQ

Is the DMG1013UWQ-7 suitable for automotive applications?

Yes, the DMG1013UWQ-7 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.