DMG4800LSD-13

Overview

The DMG4800LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±25V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 16mΩ at VGS=10V and 22mΩ at VGS=4.5V. Continuous drain current (ID) reaches 7.5A at TA=+25°C with VGS=10V, while pulsed drain current (IDM) is rated at 42A. Total power dissipation (PD) is 1.17W in steady state. The component operates within an ambient temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

• 100% avalanche rated for robustness
• Low RDS(ON) minimizes conduction losses
• Low Qg minimizes switching losses

Applications

• Backlighting
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability against Diodes Incorporated specifications.

Selection Notes

Select this component when designing circuits requiring a dual N-channel configuration in an SO-8 footprint. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions. Verify that the required gate drive voltage aligns with the specified RDS(ON) performance thresholds at 4.5V or 10V to ensure optimal efficiency.

Part Context

This part belongs to the DMG4800 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to balance low on-state resistance with high-speed switching capabilities. The 'LSD' designation indicates the specific pinout and electrical characteristics tailored for compact surface-mount applications.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Consult the official product listing for alternative components qualified to AEC-Q100/101/104/200 standards if automotive reliability is required.

FAQ

What is the maximum repetitive avalanche energy rating?

The maximum repetitive avalanche energy (EAR) is 14 mJ when tested with an inductance of 0.1mH.

How does the on-resistance vary with temperature?

The on-resistance increases as the ambient temperature rises. Graphical data shows normalized resistance variation across the operating temperature range from -55°C to +150°C.

Is the device suitable for high-reliability environments?

Yes, the part is qualified to JEDEC standards for high reliability and is 100% avalanche rated.