DMG4N65CTI

Single FETs, MOSFETs Overview

The DMG4N65CTI is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a 650V drain-source breakdown voltage and a maximum continuous drain current of 4.0A at 25°C case temperature. The device exhibits a typical static drain-source on-resistance of 2.1Ω at VGS=10V and ID=2A. Key dynamic parameters include a total gate charge of 13.5nC and a body diode reverse recovery time of 515ns. It operates within a junction temperature range of -55°C to +150°C and is housed in an ITO-220-3 package.

Single FETs, MOSFETs Feature Summary

• High breakdown voltage rating suitable for demanding power applications
• Low input capacitance supporting fast switching performance
• Lead-free finish with RoHS compliance and halogen/antimony-free construction
• Qualified to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

• Motor control systems
• Backlighting circuits
• DC-DC converters
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the manufacturer's latest documentation before finalizing designs. Confirm that the ITO-220-3 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions. Check for any recent product change notices regarding material composition or manufacturing site changes.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required alongside moderate current handling capabilities. The relatively high on-resistance makes it less suitable for low-voltage, high-current synchronous rectification compared to lower-voltage alternatives. Evaluate the thermal dissipation needs carefully, as the TO-220 package offers limited surface area for heat spreading without an external heatsink. Consider the gate charge requirements for the driving circuitry to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the DMG9N65 series family of N-channel MOSFETs manufactured by Diodes Incorporated. It shares similar voltage ratings with other members like the DMG9N65CT but differs in current handling and on-resistance characteristics due to variations in die size and technology generation. The 'CTI' suffix typically denotes specific packaging and tape/reel or tube configurations available through distributors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 650V N-channel MOSFETs in TO-220 packages from Diodes Incorporated or other manufacturers, provided they meet or exceed the 4.0A continuous current and 650V voltage ratings. Verify pinout compatibility and thermal resistance specifications before substitution.