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The DMG564H30R is a Silicon NPN epitaxial planar transistor manufactured by Panasonic Electronic Components. It features a built-in bias resistor with a ratio of 1, configured as two separate elements within a single package. The device is housed in an SC-113DB (SMINI6-F3-B) surface-mount package with six flat dual terminals. Key electrical parameters include a maximum collector current (IC) of 0.1 A and a maximum collector-emitter voltage (VCEO) of 50 V. The minimum DC current gain (hFE) is specified at 80, with a maximum power dissipation of 0.15 W. The component is RoHS compliant and halogen-free.
Verify the specific datasheet version and parameter tolerances directly with Panasonic Electronic Components before finalizing designs. Confirm that the SC-113DB footprint matches your PCB layout requirements. Ensure compliance with RoHS and halogen-free standards if required by your manufacturing specifications. Check for any recent product lifecycle notices regarding discontinuation or obsolescence.
Select this component when a low-power NPN transistor with integrated biasing is required for space-constrained designs. The 50 V rating and 0.1 A current limit define its operational boundaries. Consider the thermal constraints imposed by the 0.15 W power dissipation limit during high-frequency switching operations. Evaluate the hFE minimum of 80 to ensure adequate drive capability for downstream loads.
This part belongs to Panasonic's discrete semiconductor transistor portfolio, specifically designed for general-purpose electronic applications. It complements other small-signal transistors in the company's catalog, offering a pre-biased solution that reduces design complexity compared to standard bare transistors requiring external resistors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Panasonic resources or authorized distributors for qualified alternatives that match the SC-113DB package and electrical specifications.