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DMG7401SFGQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 9.8A PWRDI3333-8. Review the specifications below when checking this part for your BOM.
The DMG7401SFGQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates in the POWERDI3333-8 package. The device provides a maximum continuous drain current of -9.8A at +25°C, with an on-state resistance of 13mΩ at VGS = -10V. It supports gate-source voltages up to ±25V and functions within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.
Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages. It is suitable for applications requiring low conduction losses and robust switching characteristics under automotive-grade reliability standards. Evaluate thermal dissipation capabilities based on the specific PCB copper layout and ambient operating conditions.
This part belongs to the DMG7401 series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered for compact power management solutions where board real estate is limited. The series emphasizes high density and efficiency through its advanced PowerDI packaging technology.
Direct pin-to-pin replacements must match the -30V rating, P-channel configuration, and POWERDI3333-8 package dimensions. Verify that alternative components meet or exceed the required RDS(ON) specifications and AEC-Q101 qualification status for automotive applications.
The absolute maximum rating for the gate-source voltage (VGSS) is ±25V.
Yes, the datasheet specifies an avalanche current (IAR) of 14A and repetitive avalanche energy (EAR) of 104mJ.
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