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DMG7430LFGQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 10.5A PWRDI3333. Review the specifications below when checking this part for your BOM.
The DMG7430LFGQ-13 is an N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 30V and a maximum continuous drain current of 10.5A at 25°C. The device offers low on-resistance, specified as 11mΩ max at VGS=10V and 15mΩ max at VGS=4.5V. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3000 units. Confirm that the PowerDI3333-8 package dimensions align with your PCB footprint requirements. Ensure the component meets all applicable RoHS and environmental directives relevant to your manufacturing region.
Select this component when designing circuits requiring high-density layouts due to its compact PowerDI3333-8 package. Consider its low RDS(on) characteristics for minimizing conduction losses in power management applications. Verify that the 30V breakdown voltage and 10.5A current rating suit the specific load conditions of your design.
This part belongs to the DMG7430LFGQ series from Diodes Incorporated. It is designed specifically for automotive environments, meeting stringent reliability standards. The series utilizes silicon technology and is intended for surface-mount assembly, providing a compact solution for modern electronic systems.
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with package type, electrical ratings, and automotive qualification standards before implementation.
Yes, it is qualified to AEC-Q101 standards, supported by a PPAP, and manufactured in IATF 16949 certified facilities.
The maximum continuous gate-source voltage (VGSS) is rated at ±20V.
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