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DMG8N65SCT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 650V 8A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG8N65SCT
- Description：MOSFET N-CH 650V 8A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.3Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1217 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB (Type TH)
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for DMG8N65SCT
Single FETs, MOSFETs Overview
The DMG8N65SCT is an N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) of 650V and a continuous drain current of 8A at TC = +25°C. The device has a maximum drain-source on-resistance (Rds On) of 900 mOhms and a gate charge (Qg) of 30 nC. It is housed in a TO-220AB through-hole package with three leads. The component is rated for 125W power dissipation at TC = +25°C and complies with RoHS standards.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 650V breakdown rating
- Low on-resistance for efficient power switching
- Fast switching characteristics with low gate charge
- Robust thermal performance in TO-220AB package
Single FETs, MOSFETs Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the current lifecycle status before procurement, as multiple sources indicate this part is scheduled for obsolescence or discontinued by the manufacturer. Confirm datasheet revisions and final availability directly with Diodes Incorporated or authorized distributors to ensure compatibility with long-term production plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage N-channel switching with moderate current handling. Ensure the thermal management solution supports the 125W dissipation rating at the specified case temperature. Verify that the 650V rating exceeds the peak voltage stresses in the target application circuit.
Single FETs, MOSFETs Part Context
This part belongs to the single MOSFET category from Diodes Incorporated, designed for power management applications. It utilizes silicon gate technology for high voltage and fast switching performance. The TO-220AB package provides mechanical stability and heat dissipation capabilities suitable for through-hole mounting.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible substitutes with similar BVDSS and Rds On specifications. Since the part is marked for obsolescence, evaluate alternative manufacturers offering equivalent 650V N-Channel MOSFETs in TO-220 packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
