DMG964H50R

Overview

The DMG964H50R is a dual pre-biased transistor array manufactured by Panasonic Electronic Components. It integrates one NPN and one PNP bipolar junction transistor within a compact SOT-563 or SOT-666 surface-mount package. The device features a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It includes built-in bias resistors to simplify circuit design, offering a DC current gain (hFE) of 80 at Ic=5mA and Vce=10V. The total power dissipation is rated at 125mW.

Feature Summary

• Integrates complementary NPN and PNP transistors in a single surface-mount package
• Includes internal bias resistors for simplified circuit implementation
• Rated for 50V collector-emitter breakdown voltage
• Supports a maximum collector current of 100mA

Applications

• General-purpose switching applications
• Logic interface circuits
• Driver stages for low-power loads

Procurement Notes

Verify the specific package variant, as the component is available in both SOT-563 and SOT-666 configurations. Confirm that the selected part aligns with the required pinout and thermal characteristics for the target application. Ensure compliance with RoHS standards if applicable to the project requirements. Cross-reference the manufacturer's latest documentation to confirm current production status and availability.

Selection Notes

Select this component when a compact solution for complementary switching is required. The integrated bias resistors reduce external component count compared to discrete setups. Consider the 125mW power dissipation limit and the 50V voltage rating during design. Evaluate the hFE specification against the drive requirements of the intended load to ensure adequate performance.

Part Context

This device belongs to Panasonic's lineup of pre-biased transistor arrays designed for space-constrained electronics. These components are engineered to replace multiple discrete transistors and resistors, thereby improving assembly efficiency and reducing board space. The dual configuration allows for efficient control of complementary signals in digital and analog switching circuits.

Replacement Considerations

• DMG964H50RTF

FAQ

What is the DC current gain specification?

The DC current gain (hFE) is specified as 80 at a collector current of 5mA and a collector-emitter voltage of 10V.

Does the device include external resistors?

Yes, the DMG964H50R contains internal bias resistors integrated with the NPN and PNP transistors.