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The DMG9926UDM-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-26 package with a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 4.2 A at 25°C. The device exhibits low on-resistance, rated at 28 mΩ at V_GS = 4.5 V, 32 mΩ at V_GS = 2.5 V, and 40 mΩ at V_GS = 1.8 V. Total gate charge (Q_g) is 8.3 nC, supporting efficient switching. Thermal resistance from junction to ambient is 128 °C/W, with total power dissipation at 0.98 W. Operating temperature ranges from -55°C to +150°C.
Verify the ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging format as specified in the manufacturer's documentation. Confirm RoHS compliance status and 'Green' device designation requirements against specific project environmental regulations before finalizing procurement orders.
Select this component when a dual N-channel topology is required within a small footprint. Ensure the application operates within the 20 V drain-source voltage limit and 4.2 A continuous current rating. Consider the thermal resistance of 128 °C/W for heat dissipation planning in enclosed environments.
This part belongs to the DMG9926 series of dual N-channel MOSFETs. It shares the same core electrical characteristics and package dimensions as the non-suffixed DMG9926UDM variant, differing primarily in the standardized packaging configuration provided by the manufacturer.
Direct substitutes include other dual N-channel MOSFETs in SOT-26 packages with matching 20 V ratings and comparable R_DS(ON) values. Verify pinout compatibility and thermal performance metrics before implementation.
The maximum pulsed drain current (I_DM) is 30 A, limited by the junction temperature.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The typical turn-off delay time (t_D(off)) is 40.4 ns under standard test conditions.