DMG9N65CT

$1.40

Description：MOSFET N-CH 650V 9A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube,Tube

SKU:50d82ab100de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG9N65CT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 650V 9A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG9N65CT

Description：MOSFET N-CH 650V 9A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2310 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：165W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for DMG9N65CT

DMG9N65CT

Single FETs, MOSFETs Overview

The DMG9N65CT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 650V and a continuous drain current (ID) of 9.0A at 25°C case temperature. The device has a maximum on-resistance (RDS(ON)) of 1.3Ω at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and offers a power dissipation of 165W at 25°C. The component utilizes a TO-220AB through-hole package.

Single FETs, MOSFETs Feature Summary

High breakdown voltage rating suitable for demanding power applications
Low input capacitance and leakage currents for efficient switching
Qualified to AEC-Q101 standards for high reliability
Lead-free finish with halogen and antimony-free green device compliance

Single FETs, MOSFETs Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this component before procurement, as the datasheet explicitly marks it as not recommended for new design. Confirm availability through authorized distributors or secondary markets, noting that standard supply channels may no longer stock this specific part number. Ensure replacement strategies are in place prior to finalizing any purchase orders.

Single FETs, MOSFETs Selection Notes

Select this component only for legacy system maintenance or existing designs where the specific electrical characteristics match the circuit requirements. Evaluate the transition to the recommended substitute, considering pin compatibility and thermal performance differences. Review the updated datasheet for the replacement model to ensure all operational limits remain within safe boundaries for the intended application.

Single FETs, MOSFETs Part Context

This component belongs to the DMG9N65 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications requiring robust voltage handling capabilities. The product line emphasizes low on-resistance and fast switching speeds to optimize energy consumption in various electronic systems.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly recommends using DMG7N65SCT as the replacement for this discontinued part. Verify pinout compatibility and thermal resistance specifications when transitioning to the substitute component to ensure seamless integration into existing hardware layouts.