DMJ2825-000

RF Diode Overview

The DMJ2825-000 is a silicon beam-lead Schottky mixer diode designed for applications through 40 GHz. It belongs to the high-drive category within the DMJ series, intended for use in balanced mixers and Microwave Integrated Circuits (MICs). The device operates in the K-band (18.0 to 26.5 GHz) and Ka-band (26.5 to 40.0 GHz). Key electrical specifications include a maximum junction capacitance of 0.1 pF at 0 V and 1 MHz, a typical series resistance of 18 Ω at 5 mA, a barrier voltage of 4 V at 10 μA, and a forward voltage ranging from 600 mV to 700 mV at 1 mA. Absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and a maximum current of 100 mA.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Statistical Process Control wafer fabrication ensures uniformity and close impedance control
• Low parasitics and low intermodulation distortion suitable for balanced mixer configurations

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Balanced Mixers
• Detectors
• Modulators
• High-speed switches

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet documentation. Confirm that the specific part number matches the required frequency band and drive level characteristics before integration into designs. Ensure proper electrostatic discharge precautions are maintained during handling due to the sensitivity of the beam-lead structure.

RF Diode Selection Notes

Select this component when designing circuits operating in the K-band or Ka-band that require high local oscillator drive levels. The high-drive configuration provides lower distortion compared to medium or low-drive alternatives. Verify that the system can accommodate the specified series resistance and capacitance values to maintain optimal impedance matching and conversion loss performance.

RF Diode Part Context

This device is part of the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes manufactured by Skyworks Solutions, Inc. The series covers various frequency bands from S-band to Ka-band and includes single, pair, common cathode, anti-parallel, ring quad, and bridge quad configurations. The DMJ designation specifically indicates a high-drive level device optimized for applications requiring robust local oscillator power.

RF Diode Replacement Considerations

Direct replacements within the same series include other DMJ devices configured for K/Ka bands, such as DMJ2833-000 (Series Pair), DMJ2836-000 (Common Cathode), DMJ2839-000 (Anti-Parallel), and DMJ2455-000 (Ring Quad). Selection depends on the required circuit topology and pinout compatibility.