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DMJ2990-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.
RF Diode specifications for DMJ2990-000
- Description：RF DIODE SCHOTTKY 75MW
- Series：DMJ
- Mfr：Skyworks Solutions Inc.
- Package：Tray
- Diode Type：Schottky - Ring
- Voltage - Peak Reverse (Max)：-
- Current - Max：100 mA
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：75 mW
- Operating Temperature：-65°C ~ 175°C (TA)
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for DMJ2990-000
RF Diode Overview
The DMJ2990-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DMJ series, designed for high-drive applications in the X-band (8.2 to 12.4 GHz). It features a ring quad configuration with four junctions. Key electrical specifications include a maximum capacitance of 0.30 pF at 0 V and 1 MHz, a typical series resistance of 8 Ω at 5 mA, and a forward voltage range of 550 to 650 mV at 1 mA. The device operates within an ambient temperature range of -65°C to +175°C and supports a continuous wave power dissipation of 75 mW per junction.
RF Diode Feature Summary
- Beam-lead design reduces bonding challenges associated with low capacitance junctions.
- High drive level optimized for low distortion mixer applications.
- Statistical Process Control wafer fabrication ensures uniformity.
RF Diode Applications
- Microwave Integrated Circuits
- Balanced Mixers
- Detectors
RF Diode Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's datasheet revision date and part number against official Skyworks Solutions documentation. Ensure handling procedures strictly adhere to industry-standard electrostatic discharge precautions due to the sensitivity of the beam-lead structure.
RF Diode Selection Notes
Select this specific model when designing X-band circuits requiring high local oscillator drive levels. The high forward voltage characteristic minimizes intermodulation distortion compared to lower drive alternatives. Confirm that the required frequency band aligns with the specified 8.2 to 12.4 GHz operational range.
RF Diode Part Context
This component belongs to the DME, DMF, and DMJ series of beam-lead Schottky mixer diodes. These devices are categorized into six frequency bands ranging from S to Ka. The DMJ variant specifically denotes high-drive capability, distinguishing it from the medium-drive DME and low-drive DMF series within the same package family.
RF Diode Replacement Considerations
Skyworks offers other configurations within the DMJ series, such as single diodes, series pairs, common cathodes, anti-parallel pairs, and bridge quads. Verify if alternative package outlines like 491-011 or 504-012 meet the mechanical requirements of the target application.
RF Diode FAQ
What is the maximum operating temperature for the DMJ2990-000?
The absolute maximum operating temperature (TA) is +175°C.
How does the beam-lead design benefit this component?
The beam-lead design addresses bonding difficulties on the very small area characteristic of low capacitance junctions, ensuring reliable connections.
Is this device suitable for use as a switch?
Yes, the datasheet indicates these beam-lead diodes can be used as modulators and high-speed switches in addition to mixers.
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