ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMJ65H650SCTI is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 650V 10A ITO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMJ65H650SCTI
- Description：MOSFET N-CH 650V 10A ITO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：639 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB (Type TH)
- Package / Case：TO-220-3 Full Pack, Isolated Tab
Single FETs, MOSFETs datasheet and documents for DMJ65H650SCTI
Single FETs, MOSFETs Overview
The DMJ65H650SCTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 650V drain-source voltage rating and a continuous drain current of 10A at case temperature of 25°C. The device exhibits a maximum static drain-source on-resistance of 0.6Ω at VGS=10V. It is housed in an ITO-220AB through-hole package with a thermal resistance capability supporting 31W dissipation at Tc. This component is designated as Not Recommended for New Design (NRND) and has been subject to product discontinuation notifications.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction
- High voltage 650V breakdown capability
- Through-hole ITO-220AB packaging
Single FETs, MOSFETs Applications
- Power switching circuits
- DC-DC converter topologies
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the current lifecycle status before procurement, as this part is marked as Not Recommended for New Design (NRND). Confirm availability through authorized distributors, noting that some sources indicate product discontinuation. Ensure the specific suffix matches the required ITO-220AB package variant. Check for valid replacement components if long-term supply stability is required for new projects.
Single FETs, MOSFETs Selection Notes
Select this component only for legacy system maintenance or existing designs where the NRND status is acceptable. Evaluate the 0.6Ω RDS(on) specification against thermal management requirements for the target application. Consider the 10A current limit relative to peak load demands. Verify compatibility with the ITO-220AB footprint during PCB design reviews.
Single FETs, MOSFETs Part Context
This MOSFET belongs to the high-voltage silicon switch category from Diodes Incorporated. It serves as a discrete power semiconductor device designed for robust switching performance. The ITO-220AB package provides mechanical stability for through-hole mounting. The NRND designation indicates it is superseded by newer generations within the manufacturer's portfolio.
Single FETs, MOSFETs Replacement Considerations
Consult Diodes Incorporated official documentation for approved pin-compatible or functionally equivalent replacements. Verify that substitute parts meet or exceed the 650V VDS and 10A ID specifications. Ensure the replacement package matches the ITO-220AB form factor for direct board integration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
