ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMJ70H600HCT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 651V~800V TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMJ70H600HCT
- Description：MOSFET BVDSS: 651V~800V TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB (Type TH)
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for DMJ70H600HCT
Single FETs, MOSFETs Overview
The DMJ70H600HCT is a 700V N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 700V and a continuous drain current (ID) of 8.5A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 0.6Ω at VGS = 10V. Total power dissipation is rated at 104W at TC = +25°C, with a thermal resistance junction-to-case (RθJC) of 1.2°C/W. Operating and storage temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low RDS(ON) minimizes on-state losses
- Low input capacitance for efficient switching
- Fast switching speed capabilities
- Lead-free finish and RoHS compliant
Single FETs, MOSFETs Applications
- Motor controls
- DC-DC converters
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the component against the official datasheet DS45084 Rev. 2-3. Confirm the package type is TO220AB (Type TH). Ensure compliance with RoHS directives and check for automotive qualification requirements if applicable to your design specifications.
Single FETs, MOSFETs Selection Notes
Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. Evaluate thermal constraints carefully, as the device relies on heatsinking for optimal power dissipation. Consider gate drive requirements relative to the specified threshold voltage and total gate charge values.
Single FETs, MOSFETs Part Context
This part belongs to the DMJ series of N-Channel Enhancement Mode MOSFETs designed by Diodes Incorporated. These components are engineered to balance low on-resistance with fast switching characteristics, targeting modern power electronics designs that demand high efficiency and compact form factors within robust packaging solutions.
Single FETs, MOSFETs Replacement Considerations
Consult Diodes Incorporated or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous electrical parameter matching and thermal analysis.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
