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DMJ70H601SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CHANNEL 700V 8A TO252. Review the specifications below when checking this part for your BOM.
The DMJ70H601SK3-13 is a 700V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 700V and a continuous drain current (ID) of 8A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 0.6Ω at VGS = 10V. Total gate charge (Qg) is typically 20.9nC. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO252 (DPAK) package.
Verify the component status before procurement, as the datasheet explicitly states this part is not recommended for new design and has no alternate part. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance requirements align with project specifications prior to finalizing orders.
Select this component only for existing designs where it was previously specified. Evaluate thermal constraints carefully due to the specified operating temperature limits. Consider the lack of an official alternate part when planning for long-term supply chain stability and potential obsolescence risks.
This component belongs to the DMJ series of N-channel MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) case type TH housing. The product line focuses on high-voltage discrete semiconductors designed for robust performance in power electronics environments.
The datasheet explicitly states there is no alternate part available for this component. Designers must verify if the existing circuit can accommodate the end-of-life status or if a redesign using a different manufacturer's equivalent is necessary.
No, the datasheet explicitly marks the DMJ70H601SK3 as 'Not Recommended for New Design'.
The maximum Drain-Source Voltage (BVDSS) is rated at 700V.
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