SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMMT5401-7-F is a matched pair of PNP high-voltage transistors in an SOT26 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of -150V and a maximum collector current (IC) of -200mA. The device provides a total power dissipation of 300mW with a junction-to-ambient thermal resistance of 417°C/W. Electrical characteristics include a DC current gain (hFE) ranging from 50 to 240 at -10mA, and a saturation voltage (VCE(sat)) of -0.5V max at -50mA. The transition frequency (fT) reaches 300MHz. Operating temperature spans -55°C to +150°C.
Verify the component against the official Diodes Incorporated datasheet DS30437 Rev. 9 - 2. Confirm that the SOT26 package marking K4S matches the intended revision. Ensure the application environment respects the specified thermal limits and operating temperature range of -55°C to +150°C.
Select this component when a dual PNP configuration with high voltage tolerance is required in a small footprint. The intrinsic matching makes it suitable for differential stages or balanced circuits where parameter consistency between transistors is critical. Verify that the -200mA current rating meets the load requirements.
This part belongs to the DMMT series of matched transistor pairs manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction to ensure reliability. The SOT26 package allows for efficient space utilization on printed circuit boards while maintaining electrical isolation between the two internal transistors.
Check for automotive-grade equivalents such as the Q-suffix variants if AEC-Q101 qualification is required. Verify pinout compatibility before substituting with other SOT26 packages from different manufacturers.
The DC Current Gain (hFE), Collector-Emitter Saturation Voltage (VCE(sat)), and Base-Emitter Saturation Voltage (VBE(sat)) are matched with a typical tolerance of 1% and a maximum tolerance of 2%.