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The DMMT5401-7 is a matched PNP small-signal surface-mount transistor manufactured by Diodes Incorporated. It integrates two PNP transistors in a single SOT-363 (SC-88) package, designed for high-voltage applications with a collector-emitter breakdown voltage of 150V and a maximum continuous collector current of 200mA. The device features a power dissipation rating of 200mW and a transition frequency of 300MHz. Key electrical parameters include a DC current gain (HFE) of at least 60 at IC=10mA and VCE=-5V, and a saturation voltage of 500mV at IC=-100mA and IB=-5mA. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the ordering code matches the required tape-and-reel quantity specifications. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Cross-reference the package marking codes to distinguish between manufacturing lots and revisions.
Select this component when a dual PNP configuration is required in a minimal footprint. The 150V rating makes it suitable for higher voltage logic levels compared to standard 40V transistors. Consider the 200mA current limit for load requirements. Evaluate thermal management needs given the 200mW power dissipation limit in the SOT-363 package.
This part belongs to Diodes Incorporated's family of matched small-signal transistors. It serves as a dual-transistor alternative to discrete single PNP devices, reducing board space and assembly complexity. Similar parts in the series may offer different voltage ratings or complementary NPN/PNP configurations, such as the MMDT5451.
Direct substitutes include other matched PNP pairs in SOT-363 packages from manufacturers like Nexperia or onsemi, provided they meet the 150V VCEO and 200mA IC specifications. Verify pinout alignment before substitution.