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DMN1008UFDFQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1008UFDFQ-7
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23.4 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：995 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN1008UFDFQ-7
Single FETs, MOSFETs Overview
The DMN1008UFDFQ-7 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (Vdss) of 12 V and a continuous drain current (Id) of 12.2 A at Ta = +25°C. The device offers a maximum on-resistance (Rds(on)) of 8 mΩ at Vgs = 4.5V and 12.5 mΩ at Vgs = 2.5V. Total gate charge (Qg) is 23.4 nC at Vgs = 8V. It operates within a temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 package.
Single FETs, MOSFETs Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low profile design with a 0.6mm case height
- Totally lead-free, halogen-free, and antimony-free construction
Single FETs, MOSFETs Applications
- Battery management systems
- Power management functions
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required reel size. The Q-7 suffix indicates a 7-inch reel containing 3,000 units per reel. Confirm that the component meets the necessary IATF 16949 manufacturing facility requirements for your specific automotive supply chain needs.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for space-constrained automotive designs. The U-DFN2020-6 package provides a small PCB footprint suitable for low-profile applications. Ensure the gate drive voltage supports the specified Rds(on) thresholds for optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of advanced information MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability requirements. The device utilizes a molded plastic green molding compound with UL flammability classification rating 94V-0.
Single FETs, MOSFETs Replacement Considerations
Check datasheet compatibility for pinout and electrical parameters before substituting. No direct public substitute part numbers are confirmed in the provided documentation.
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