DMN1019USNQ-7

$0.13

Description：MOSFET BVDSS: 8V~24V SC59 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:57888448c55e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1019USNQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SC59 T&R 3K. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1019USNQ-7

Description：MOSFET BVDSS: 8V~24V SC59 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50.6 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2426 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：680mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SC-59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN1019USNQ-7

DMN1019USNQ-7

Single FETs, MOSFETs Overview

The DMN1019USNQ-7 is a 12V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 12V and a continuous drain current (ID) of 9.3A at TA = +25°C. The device exhibits a low on-resistance (RDS(ON)) of 10mΩ max at VGS = 4.5V, with specific values of 12mΩ at 2.5V and 14mΩ at 1.8V. Total gate charge (Qg) is 27.3nC at VGS = 4.5V. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use.
Features an ESD protected gate structure.
Manufactured in IATF 16949 certified facilities.
Totally lead-free and fully RoHS compliant.

Single FETs, MOSFETs Applications

Load Switch
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the part number suffix against official Diodes Incorporated documentation to confirm packaging quantity and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability records required for automotive-grade components. Confirm compliance with RoHS directives and check for any specific change control notifications relevant to this manufacturing lot.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 12V rated N-channel MOSFET with high current handling capabilities. Consider the low RDS(ON) characteristics for efficient power management in DC-DC converters. Verify that the SC59 package dimensions fit the PCB layout constraints and ensure thermal management strategies align with the specified junction-to-ambient thermal resistance values.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of advanced information MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SC59 surface-mount case. The device is specifically engineered to meet stringent automotive reliability requirements while maintaining compact physical dimensions suitable for dense circuit board layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated substitution guides or datasheets for verified equivalent parts. Do not assume functional compatibility based solely on similar electrical ratings without cross-referencing pin configurations and thermal characteristics.