DMN1019UVT-7

$0.44

Description：MOSFET N-CH 12V 10.7A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:87e27327740d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1019UVT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 10.7A TSOT26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1019UVT-7

Description：MOSFET N-CH 12V 10.7A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：10.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50.4 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2588 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.73W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for DMN1019UVT-7

DMN1019UVT-7

Single FETs, MOSFETs Overview

The DMN1019UVT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 12V. The device exhibits low on-resistance, specified as 10mΩ maximum at VGS=4.5V and ID=9.7A. Continuous drain current reaches 10.7A at TA=+25°C. Total gate charge is 50.4nC at VGS=8V. Operating temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Gate terminal includes integrated ESD protection circuitry.

Single FETs, MOSFETs Applications

Load Switch
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and halogen-free classification requirements match project constraints. Ensure thermal management design accounts for junction-to-ambient resistance values provided in the datasheet under steady-state conditions.

Single FETs, MOSFETs Selection Notes

Select this component when low RDS(ON) is critical for minimizing conduction losses in 12V systems. Evaluate gate charge parameters against driver capabilities to ensure adequate switching speeds. Verify that continuous and pulsed drain current ratings exceed peak load demands within the intended operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 surface-mount case. The product line targets compact power management solutions requiring efficient switching characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pin configurations and electrical limits before implementation.