DMN1032UCP4-7

$0.13

Description：MOSFET BVDSS: 8V~24V X1-DSN1010-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:c12cab65db02 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1032UCP4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X1-DSN1010-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1032UCP4-7

Description：MOSFET BVDSS: 8V~24V X1-DSN1010-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：28mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.2 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：790mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DSN1010-4 (Type B)
Package / Case：4-XFBGA, DSBGA

Single FETs, MOSFETs datasheet and documents for DMN1032UCP4-7

DMN1032UCP4-7

Single FETs, MOSFETs Overview

The DMN1032UCP4-7 is an N-channel enhancement mode MOSFET utilizing second-generation lateral MOSFET (LD-MOS) technology. It features a maximum drain-source voltage of 12V and a continuous drain current of 5.0A at +25°C. The device achieves a typical on-resistance of 18mΩ at VGS = 4.5V, with a maximum of 28mΩ. Total gate charge is typically 3.2nC, supporting ultra-fast switching capabilities. It is housed in an X1-DSN1010-4 package with dimensions of 1.0mm x 1.0mm and a height of 0.45mm.

Single FETs, MOSFETs Feature Summary

Second-generation LD-MOS technology engineered to minimize on-state losses and enable ultra-fast switching for high efficiency power transfer.
Chip-Scale Package (CSP) design that increases power density by combining low thermal impedance with minimal footprint area.
Low turn-on potential achieved through a typical gate threshold voltage of 0.8V.

Single FETs, MOSFETs Applications

DC-DC converters
Battery management systems
Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packing quantity of 3,000 units as documented in the official datasheet. Confirm compliance requirements such as RoHS and Halogen-free status against project specifications. Ensure the X1-DSN1010-4 package dimensions align with the PCB footprint layout constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a compact form factor with high power density. The 12V rating and 5.0A continuous current capability suit low-voltage applications. Evaluate the 18mΩ typical on-resistance for conduction loss optimization. Consider the 0.45mm profile for space-constrained designs where standard packages are unsuitable.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes advanced lateral MOSFET technology specifically optimized for low on-resistance and fast switching speeds. The product line targets modern electronics demanding high efficiency within minimal physical footprints.