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DMN10H100SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 18A TO252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H100SK3-13
- Description：MOSFET N-CH 100V 18A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1172 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for DMN10H100SK3-13
Single FETs, MOSFETs Overview
The DMN10H100SK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 80mΩ at VGS=10V and 100mΩ at VGS=4.5V. The device supports a continuous drain current of 18A at TC=+25°C and 14A at TC=+70°C, with a pulsed drain current capability of 16A. Total power dissipation reaches 37W at TC=+25°C. Operating junction temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance design minimizes conduction losses for high efficiency
- Fast switching characteristics suitable for high-frequency applications
- Thermally efficient TO-252 package enables higher density end products
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- Power management functions
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, specifically ensuring compliance with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2). Ensure the application environment remains within the specified thermal limits to maintain rated performance.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V rating is required alongside low conduction losses in a compact surface-mount form factor. Evaluate the thermal resistance parameters against the expected heat dissipation requirements of the target circuit. Consider the gate threshold voltage specifications to ensure compatibility with the intended logic-level drive signals for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered for general-purpose power switching applications requiring robust performance in a small outline package. The product line emphasizes energy efficiency through reduced on-state resistance while maintaining reliable operation across a wide temperature range.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should strictly adhere to electrical parameter matching and pinout compatibility defined by the original datasheet.
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current at an elevated case temperature?
The maximum continuous drain current decreases to 14A when the case temperature is maintained at +70°C.
How does the on-resistance vary with gate-source voltage?
The maximum static drain-source on-resistance is specified as 80mΩ at a gate-source voltage of 10V, and increases to a maximum of 100mΩ at a gate-source voltage of 4.5V.
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