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DMN10H170SFDE-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.9A 6UDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H170SFDE-7
- Description：MOSFET N-CH 100V 2.9A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
Single FETs, MOSFETs datasheet and documents for DMN10H170SFDE-7
Single FETs, MOSFETs Overview
The DMN10H170SFDE-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 2.9A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V. Total gate charge is 9.7nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 (Type E) package.
Single FETs, MOSFETs Feature Summary
- Designed for low profile applications with a 0.6mm case height
- Optimized for high-efficiency power management through minimized on-state resistance
- Maintains superior switching performance alongside low conduction losses
- Compliant with RoHS standards and free from halogen and antimony
Single FETs, MOSFETs Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, and Transistors
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Ensure compatibility with the designated PCB footprint dimensions prior to finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a compact surface-mount solution is required for 100V switching applications. Evaluate thermal dissipation requirements based on the specified junction-to-ambient resistance values. Consider the gate charge characteristics for driving circuit design to ensure optimal switching speeds in the target application.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in a U-DFN2020-6 (Type E) package, which provides a small PCB footprint of approximately 4mm². The series is engineered to balance low on-resistance with efficient switching capabilities for modern electronic designs.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed using identical electrical parameters and physical package dimensions to ensure functional equivalence without redesigning the host circuit board.
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