DMN15H310SE-13

$1.33

Description：MOSFET N-CH 150V 2A/7.1A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3a64bf28cff2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN15H310SE-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 150V 2A/7.1A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN15H310SE-13

Description：MOSFET N-CH 150V 2A/7.1A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta), 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：310mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for DMN15H310SE-13

DMN15H310SE-13

Single FETs, MOSFETs Overview

The DMN15H310SE-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-223 package. It features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 2.0 A at +25°C ambient temperature, or 7.1 A at +25°C case temperature. The maximum on-resistance (Rds(on)) is 310 mΩ at Vgs = 10V with Id = 1.5A, and 330 mΩ at Vgs = 5.0V with Id = 1.0A. Total power dissipation is rated at 1.9 W at +25°C ambient. The device operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Subjected to 100% Unclamped Inductive Switch (UIS) testing during production.
Features fast switching speed characteristics.

Single FETs, MOSFETs Applications

Motor Control
Transformer Driving Switch
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and is halogen and antimony free according to the provided definitions. Ensure the procurement channel is authorized to avoid warranty issues.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V breakdown voltage and low on-resistance are required for efficient power management. Consider the thermal constraints, specifically the 1.9 W power dissipation limit at ambient temperatures, and ensure adequate heat sinking if operating near case temperature limits. Verify gate drive voltage compatibility with the specified Rds(on) test conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN15 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a molded plastic case material classified as UL 94V-0 flammability rating. The terminals are finished with matte tin annealed over a copper leadframe, ensuring solderability per MIL-STD-208.