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DMN2004WKQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 540MA SOT323. Review the specifications below when checking this part for your BOM.
The DMN2004WKQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 20V and a continuous drain current of 540mA at 25°C. The device offers a maximum on-resistance of 550mΩ at VGS=4.5V and ID=540mA, with a gate threshold voltage max of 1.0V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-323 package.
Verify the component matches the specific Diodes Incorporated datasheet DS39166 Rev. 1-2. Confirm the part number suffix '-7' corresponds to the tape and reel packaging configuration. Ensure the application environment aligns with the specified operating temperature range and thermal characteristics provided in the official documentation.
Select this component for compact automotive designs requiring low power dissipation. The SOT-323 package suits space-constrained layouts. Evaluate the 550mΩ on-resistance against circuit efficiency requirements. Consider the 20V breakdown voltage for low-voltage signal or power switching tasks.
This MOSFET belongs to the DMN series from Diodes Incorporated, tailored for automotive-grade performance. It utilizes a molded plastic case material classified as UL 94V-0. The device is lead-free, fully RoHS compliant, and halogen-free, meeting stringent environmental standards for modern electronic assemblies.
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering other manufacturers' parts.
Yes, the device includes an internal gate protection diode and is ESD protected.
The maximum gate-source voltage (VGSS) is rated at ±8V.
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