Single FETs, MOSFETs DMN2004WKQ-7 product image

DMN2004WKQ-7

$0.34
  • Description:MOSFET N-CH 20V 540MA SOT323
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c3f438772fb7 Category: Brand:

  
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DMN2004WKQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 540MA SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2004WKQ-7

  • Description:MOSFET N-CH 20V 540MA SOT323
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:540mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):200mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-323
  • Package / Case:SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN2004WKQ-7

DMN2004WKQ-7

Single FETs, MOSFETs Overview

The DMN2004WKQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 20V and a continuous drain current of 540mA at 25°C. The device offers a maximum on-resistance of 550mΩ at VGS=4.5V and ID=540mA, with a gate threshold voltage max of 1.0V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-323 package.

Single FETs, MOSFETs Feature Summary

  • Qualified to AEC-Q101 standards for high reliability
  • Low on-resistance and low gate threshold voltage
  • Fast switching speed and low input capacitance
  • ESD protected with internal gate protection diode

Single FETs, MOSFETs Applications

  • Engine Management Systems
  • DC-DC Converters
  • Body Control Electronics

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific Diodes Incorporated datasheet DS39166 Rev. 1-2. Confirm the part number suffix '-7' corresponds to the tape and reel packaging configuration. Ensure the application environment aligns with the specified operating temperature range and thermal characteristics provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for compact automotive designs requiring low power dissipation. The SOT-323 package suits space-constrained layouts. Evaluate the 550mΩ on-resistance against circuit efficiency requirements. Consider the 20V breakdown voltage for low-voltage signal or power switching tasks.

Single FETs, MOSFETs Part Context

This MOSFET belongs to the DMN series from Diodes Incorporated, tailored for automotive-grade performance. It utilizes a molded plastic case material classified as UL 94V-0. The device is lead-free, fully RoHS compliant, and halogen-free, meeting stringent environmental standards for modern electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering other manufacturers' parts.

Single FETs, MOSFETs FAQ

Does the DMN2004WKQ include internal protection?

Yes, the device includes an internal gate protection diode and is ESD protected.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±8V.

DMN2004WKQ-7DMN2004WKQ-7
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