DMN2055UWQ-7

$0.31

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d3540089f217 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2055UWQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2055UWQ-7

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：46mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：520mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN2055UWQ-7

DMN2055UWQ-7

Single FETs, MOSFETs Overview

The DMN2055UWQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 3.1A at +25°C. The device exhibits low on-resistance, with RDS(ON) values of 46mΩ max at VGS = 4.5V and 53mΩ max at VGS = 2.5V. Total gate charge (Qg) is typically 4.3nC. Thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 241°C/W steady state on FR-4 substrate. Operating temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency power management
Low input capacitance enabling fast switching speed
Suitable for automotive applications requiring specific change control
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions
DC-DC converters
Analog switch

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision and date code markings against the latest manufacturer documentation before integration. Confirm that the SOT323 packaging format aligns with the target PCB footprint requirements. Ensure compliance with AEC-Q101 qualification standards if the application involves automotive environments or requires PPAP capability. Validate thermal performance under actual operating conditions using the specified thermal resistance parameters.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for 20V applications. The SOT323 package offers space-saving benefits for portable devices. Consider the gate threshold voltage range and total gate charge for driving compatibility with logic-level controllers. Evaluate thermal dissipation capabilities based on the expected duty cycle and ambient temperature constraints.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN2055UWQ variant specifically targets general-purpose interfacing and power management tasks within a small outline transistor package suitable for surface mount technology.