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DMN2100UDM-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3.3A SOT-26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2100UDM-7
- Description：MOSFET N-CH 20V 3.3A SOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：55mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：555 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-26
- Package / Case：SOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN2100UDM-7
Single FETs, MOSFETs Overview
The DMN2100UDM-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent transistors within a single SOT-26 surface-mount package to optimize board space and simplify circuit design. The device utilizes silicon technology for reliable switching performance in low-voltage applications.
Single FETs, MOSFETs Feature Summary
- Dual configuration integrating two independent N-channel transistors into a single compact package
- Enhancement mode operation suitable for general-purpose switching applications
- Surface-mount construction designed for automated assembly processes
Single FETs, MOSFETs Applications
- Low-side switching circuits requiring dual channel isolation
- Battery protection modules utilizing integrated dual transistor topology
- General-purpose signal switching in consumer electronics
Single FETs, MOSFETs Procurement Notes
Verify the specific electrical parameters against the official Diodes Incorporated datasheet prior to implementation. Confirm that the SOT-26 package dimensions align with the target PCB footprint. Ensure the selected variant matches the required voltage and current ratings for the intended application environment.
Single FETs, MOSFETs Selection Notes
Select this component when a dual N-channel configuration is required to minimize board area compared to discrete solutions. Evaluate the thermal characteristics of the SOT-26 package to ensure adequate heat dissipation for the expected load currents. Compare total system cost against using individual single-channel MOSFETs to validate the efficiency of the dual-integrated approach.
Single FETs, MOSFETs Part Context
This component belongs to the DMN series of dual MOSFETs from Diodes Incorporated, which focuses on providing integrated solutions for space-constrained designs. The series offers various voltage and current ratings packaged in small outline transistor formats to support modern miniaturization trends in electronic equipment manufacturing.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
