DMN2450UFB4-7B

Single FETs, MOSFETs Overview

The DMN2450UFB4-7B is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a compact X2-DFN1006-3 package. It features a drain-source voltage (VDSS) of 20V and a gate-source voltage (VGSS) rating of ±12V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 0.4Ω at VGS = 4.5V with a continuous drain current (ID) of 1.0A at +25°C. Additional RDS(ON) specifications include 0.5Ω at VGS = 2.5V (0.9A ID) and 0.7Ω at VGS = 1.8V (0.8A ID). The gate threshold voltage ranges from 0.5V to 0.9V. Total gate charge is 0.6nC at VGS = 4.5V and 1.3nC at VGS = 10V. Operating temperature spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Minimized on-state resistance combined with superior switching performance for high efficiency power management.
• Ultra-small footprint of 0.6mm², significantly reducing board space compared to traditional SOT23 packages.
• Low profile construction with a 0.4mm height, suitable for space-constrained applications.
• Integrated ESD protection on the gate terminal.

Single FETs, MOSFETs Applications

• Load Switch
• High efficiency power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel size and tape pitch. The -7B suffix indicates a 7-inch reel with 10,000 units per reel. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the supplier provides traceability data consistent with manufacturer standards.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance is critical for minimizing conduction losses in small form factor designs. The low gate threshold voltage supports operation with lower logic drive levels. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient conditions, as power handling varies with mounting configuration.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for surface mount applications. The X2-DFN1006-3 package provides a lead-free, halogen-free, and antimony-free solution compliant with environmental directives.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-referencing requires matching VDSS, ID, RDS(ON), package type, and pinout configuration to ensure functional compatibility without redesigning the PCB layout.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the DMN2450UFB4?

The maximum pulsed drain current is 3.0A, specified with a 10μs pulse duration and a 1% duty cycle.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Typical curves show higher RDS(ON) values at elevated temperatures such as 125°C and 150°C compared to room temperature.

Is the gate protected against electrostatic discharge?

Yes, the device features an ESD protected gate structure.