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DMN2710UTQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.
The DMN2710UTQ-13 is an N-channel enhancement mode MOSFET in a SOT523 package. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.87A at +25°C. The static drain-source on-resistance (RDS(ON)) is 0.45Ω max at VGS = 4.5V, and 0.6Ω max at VGS = 2.5V. Total gate charge (Qg) is typically 0.6nC. Operating temperature range is -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 qualification requirements if automotive application compliance is necessary for the design.
Select this component for applications requiring low input capacitance and fast switching speed within a 20V voltage rating. Ensure the gate drive voltage supports the specified RDS(ON) thresholds. Verify thermal management capabilities against the junction-to-ambient thermal resistance values provided in the datasheet.
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is manufactured in IATF 16949 certified facilities and is suitable for automotive applications requiring specific change control protocols.
DMN2710UV-13
Yes, the DMN2710UTQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The maximum continuous gate-source voltage (VGSS) is rated at ±6V.
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