DMN2990UFB-7B

Single FETs, MOSFETs Overview

The DMN2990UFB-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and an ultra-small X1-DFN1006-3 surface-mount package. The device provides a typical static drain-source on-resistance (R_DS(ON)) of 496 mΩ at V_GS = 4.5 V, with a maximum continuous drain current (I_D) of 0.78 A at +25°C. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from 0.4 V to 1.0 V, total gate charge (Q_g) of 0.41 nC, and input capacitance (C_iss) of 31 pF. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-small X1-DFN1006-3 surface mount package for space-constrained designs
• Low on-state resistance optimized for high-efficiency power management
• Fast switching speed supported by low input capacitance and gate charge
• ESD protected gate structure with integrated protection diode

Single FETs, MOSFETs Applications

• Battery charging circuits
• Power management functions
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, as suffixes can indicate variations in reel specifications or tape-and-reel configurations. Ensure compliance with RoHS 2, RoHS 3, and halogen-free requirements if specified for the project. Confirm that the X1-DFN1006-3 footprint matches the PCB layout guidelines provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with a 20 V rating is required for low-power applications. The low R_DS(ON) makes it suitable for battery-powered devices where minimizing conduction losses is critical. Verify that the gate drive voltage meets the minimum threshold requirements for full enhancement, particularly at lower voltages such as 1.8 V or 2.5 V.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2990 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to balance low on-resistance with superior switching performance. The DMN2990UFB variant specifically utilizes the X1-DFN1006-3 package, distinguishing it from other variants that may use different form factors while maintaining similar electrical characteristics.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same product family, such as the DMN2990UDJ or DMN2990UFA, ensuring package compatibility and electrical parameter alignment before substitution.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the DMN2990UFB-7B?

The maximum continuous drain current is 0.78 A at a case temperature of +25°C.

Does the DMN2990UFB-7B have an internal body diode?

Yes, the device includes a maximum continuous body diode forward current rating of 0.72 A.

Is the DMN2990UFB-7B qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.