DMN3009LFV-7

$0.57

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ee52b0fe6540 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMN3009LFV-7

Overview

The DMN3009LFV-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (Type UX) surface-mount packaging and operates within a junction temperature range of -55°C to +150°C. The device features a drain-source breakdown voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 60A at TC = +25°C. Static characteristics include a gate threshold voltage (VGS(TH)) ranging from 1V to 3V, with a maximum on-resistance (RDS(ON)) of 5.5mΩ at VGS = 10V and 9.0mΩ at VGS = 4.5V. Dynamic performance includes a total gate charge (Qg) of 42nC at VGS = 10V, turn-on delay time of 3.9ns, and turn-off fall time of 15ns.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area occupied by SO-8.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify that the ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration specified in the manufacturer's documentation. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure thermal design accounts for the specific PCB copper area and mounting conditions defined in the datasheet thermal characteristics section.

Selection Notes

Select this component when low conduction losses and compact footprint are required for 30V DC-DC conversion or backlighting circuits. Evaluate the RDS(ON) values at both 10V and 4.5V gate drive levels to ensure compatibility with the system's control logic. Consider the thermal resistance parameters relative to the intended PCB layout and ambient operating temperatures.

Part Context

This part belongs to the DMN3009LFV series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed specifically for high-efficiency power management tasks where minimizing board space and reducing on-state losses are critical design constraints. The device integrates advanced silicon technology within a specialized plastic molding compound case.