DMN3009LFVWQ-13

$0.31

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d65bdd94d8f7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN3009LFVWQ-13

Overview

The DMN3009LFVWQ-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of 30V and continuous drain current ratings of 60A at TC=25°C and 48A at TC=70°C. The static drain-source on-resistance is 5.0mΩ max at VGS=10V and 7.4mΩ max at VGS=4.5V. Total gate charge is 42nC at VGS=10V. Operating temperature range spans -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% Unclamped Inductive Switching (UIS) Test in Production ensures more reliable and robust end application

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity, as the datasheet lists both -7 (2,000 units) and -13 (3,000 units) variants. Confirm that the component meets all necessary automotive qualification requirements, including IATF 16949 manufacturing facility certification, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring low on-state losses and high current handling within a compact footprint. The device is suitable for applications demanding small board area reduction compared to traditional SO-8 packages. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under different mounting conditions.

Part Context

This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. It utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe. The component is designed to be totally lead-free, fully RoHS compliant, and halogen and antimony free, classifying it as a 'Green' device.

Replacement Considerations

DMT3009LFVW-13

FAQ

Is the DMN3009LFVWQ-13 suitable for automotive applications?

Yes, the DMN3009LFVWQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.