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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN3011LFDF-13 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in U-DFN2020-6 (Type F). It features a maximum drain-source on-resistance of 12mΩ at VGS=10V and 16mΩ at VGS=4.5V. The device supports a continuous drain current of 10.8A at TA=+25°C with a total power dissipation of 1.4W to 2W depending on mounting conditions. Thermal resistance ranges from 4.7°C/W junction-to-case to 88.2°C/W junction-to-ambient. Operating temperature spans -55°C to +150°C.
Feature Summary
- Designed for low profile applications with a 0.6mm package height and compact PCB footprint.
- Optimized for high-efficiency power management through minimized on-state resistance and superior switching performance.
- Compliant with RoHS directives and manufactured as a halogen-free and antimony-free green device.
Applications
- Battery management systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the U-DFN2020-6 (Type F) package dimensions align with the target PCB layout requirements. Ensure compatibility with NiPdAu terminal finishes for solderability standards.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for space-constrained designs. Evaluate thermal constraints based on the specified junction-to-ambient resistance values. Consider the gate threshold voltage range for logic-level drive compatibility in control circuits.
Part Context
This part belongs to the DMN30xx series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology within a lead-free U-DFN2020-6 package designed for surface mount assembly. The product line targets general-purpose power switching and distribution applications.
Replacement Considerations
Consult official documentation for verified substitutes. Cross-reference pinouts and electrical parameters carefully before implementation.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 10.8A at an ambient temperature of +25°C.
Is this device suitable for automotive applications?
For automotive applications requiring AEC-Q100 qualification or PPAP capability, contact Diodes Incorporated directly as standard parts may not meet these specific change controls.
