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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN3011LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage (BVDSS) of 30 V and a continuous drain current (Id) of 58 A. Its on-resistance (Rds On) is 11 mOhms, with a gate-source voltage rating of ±20 V and a threshold voltage (Vgs th) of 2.25 V. The total gate charge (Qg) is 19.7 nC. It operates within a temperature range of -55 °C to +150 °C and has a power dissipation (Pd) of 2.6 W.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching applications.
- PowerDI3333-8 package design optimized for high thermal performance and compact board space.
- Low on-resistance characteristics supporting high current handling capabilities.
Applications
- DC-DC converter circuits
- Load switching applications
- Power distribution systems
Procurement Notes
Verify the specific ordering suffix LFVW-7 to ensure correct reel quantity and tape specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Check for any regional sales restrictions or supply limitations directly with authorized distributors. Ensure component authenticity by sourcing from verified channels only.
Selection Notes
Select this component when a single N-channel MOSFET with 30 V rating and high current capacity is required. The PowerDI3333-8 package offers a balance of thermal efficiency and footprint reduction. Consider the 11 mOhm on-resistance for conduction loss calculations. Verify that the 58 A current rating aligns with the specific application's peak and continuous load requirements.
Part Context
This part belongs to the Diodes Incorporated MOSFET product line, specifically designed for general-purpose switching. It is categorized under transistors and falls within the broader family of silicon-based field-effect devices. The PowerDI series emphasizes advanced packaging technologies for improved reliability and thermal management in modern electronic designs.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. No specific substitute part numbers are confirmed in the provided data.
