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Product Detailed Parameters
- Description：MOSFET N-CH 30V 11.8A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：706 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.03W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN3021LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-state resistance (RDS(ON)) of 15mΩ at VGS=10V, supporting a continuous drain current (ID) of 9.3A at TA=+25°C. The device utilizes a U-DFN2020-6 (Type F) surface-mount package with a 0.6mm profile. Key electrical characteristics include a gate threshold voltage (VGS(TH)) ranging from 1.0V to 2.2V and a total gate charge (QG) of 14nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a low gate threshold voltage and fast switching speed capabilities.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
Applications
- Battery Management Applications
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. The standard tape and reel configuration typically contains 3,000 units per reel. Ensure compatibility with the required moisture sensitivity level and soldering profiles specified in the mechanical data section before procurement.
Selection Notes
Select this component for designs requiring a compact footprint with a 4mm² PCB area. Evaluate thermal dissipation requirements based on the steady-state power dissipation ratings provided for both ambient air and copper plate mounting conditions. Confirm that the gate drive voltage aligns with the RDS(ON) specifications for optimal conduction losses.
Part Context
This part belongs to the DMN3021LFDF series of N-channel MOSFETs from Diodes Incorporated. It is housed in a U-DFN2020-6 (Type F) case, which is a molded plastic package with a green molding compound and UL flammability rating of 94V-0. The terminals are finished with NiPdAu over a copper leadframe.
Replacement Considerations
Consult the manufacturer's official documentation for qualified substitutes. Verify pinout compatibility and electrical parameter equivalence when considering alternative components.
FAQ
What is the maximum continuous drain current at an ambient temperature of +70°C?
At an ambient temperature of +70°C, the maximum continuous drain current is 7.5A.
Is this component suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly as standard parts may not meet these specific criteria.
